IAUC100N04S6L025ATMA1 vs IAUC120N04S6L012ATMA1 对比
详细并排对比 IAUC100N04S6L025ATMA1 出自 Infineon 和 IAUC120N04S6L012ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC100N04S6L025ATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $1.21 |
| Technology | OptiMOS 6 40V trench MOSFET | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | 480 A |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 40V |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC | — | 120 A |
| On-State Resistance (RDS(on)) at 10V VGS | — | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Power Dissipation (PD) at TC | — | 115 W |
| 工作温度范围 | — | -55 °C to +175 °C (junction) |
| Delivery Form | — | Tape & Reel |