IAUC120N04S6L012ATMA1 vs IAUC100N04S6L025ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N04S6L012ATMA1 von Infineon und IAUC100N04S6L025ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N04S6L012ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,21 | $0,62 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 40V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC | 115 W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction) | — |
| Gehäuse | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Delivery Form | Tape & Reel | — |
| Technology | — | OptiMOS 6 40V trench MOSFET |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Lead-Free | — | Yes |