IAUC120N04S6L012ATMA1 vs IAUC100N04S6L025ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N04S6L012ATMA1 por Infineon y IAUC100N04S6L025ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ ActivoInfineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N04S6L012ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,21 | $0,62 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 40V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC | 115 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (junction) | — |
| Encapsulado | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Delivery Form | Tape & Reel | — |
| Technology | — | OptiMOS 6 40V trench MOSFET |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Lead-Free | — | Yes |