IAUC120N06S5L015ATMA1 vs IAUC41N06S5N102ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N06S5L015ATMA1 von Infineon und IAUC41N06S5N102ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ AktivInfineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N06S5L015ATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,58 |
| Technology | N-Channel MOSFET (OptiMOS 5) | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | 42 W |
| Betriebstemperaturbereich | -55C to +175C (Tj) | -55C to +175C (junction) |
| Gehäuse | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Montageart | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per Infineon automotive MOSFET family) |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Channel Polarity | — | N-Channel (single) |