IAUC41N06S5L vs IAUC41N06S5N102ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC41N06S5L von Infineon und IAUC41N06S5N102ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC41N06S5L | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC41N06S5L | — |
| Technology | OptiMOS-5 trench MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>) | [DATA_NEEDED: I_D max value] | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 10 mΩ typical | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | Logic-level (around 1.7 V typical) | — |
| Maximum Operating Junction Temperature | 175 °C | — |
| Gehäuse | TDSON-8 (PG-TDSON-8) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Type | N-channel, Enhancement mode | — |
| RoHS-Status | Compliant (Green Product) | Compliant |
| Lead-Free | Yes | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS max absolute rating] | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Betriebstemperaturbereich | — | -55C to +175C (junction) |
| Channel Polarity | — | N-Channel (single) |