IAUC41N06S5L vs IAUC41N06S5N102ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC41N06S5L par Infineon et IAUC41N06S5N102ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC41N06S5L | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,78 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC41N06S5L | — |
| Technology | OptiMOS-5 trench MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>) | [DATA_NEEDED: I_D max value] | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 10 mΩ typical | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | Logic-level (around 1.7 V typical) | — |
| Maximum Operating Junction Temperature | 175 °C | — |
| Boîtier | TDSON-8 (PG-TDSON-8) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Type de montage | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Type | N-channel, Enhancement mode | — |
| Statut RoHS | Compliant (Green Product) | Compliant |
| Lead-Free | Yes | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS max absolute rating] | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Plage de température de fonctionnement | — | -55C to +175C (junction) |
| Channel Polarity | — | N-Channel (single) |