IAUC41N06S5L vs IAUC41N06S5N102ATMA1 Comparación
Comparación detallada lado a lado de IAUC41N06S5L por Infineon y IAUC41N06S5N102ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC41N06S5L | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC41N06S5L | — |
| Technology | OptiMOS-5 trench MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>) | [DATA_NEEDED: I_D max value] | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 10 mΩ typical | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | Logic-level (around 1.7 V typical) | — |
| Maximum Operating Junction Temperature | 175 °C | — |
| Encapsulado | TDSON-8 (PG-TDSON-8) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Type | N-channel, Enhancement mode | — |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Lead-Free | Yes | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS max absolute rating] | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Rango de temperatura de funcionamiento | — | -55C to +175C (junction) |
| Channel Polarity | — | N-Channel (single) |