IAUC41N06S5L vs IAUC41N06S5N102ATMA1 对比

详细并排对比 IAUC41N06S5L 出自 Infineon 和 IAUC41N06S5N102ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC41N06S5N102ATMA1 IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon

IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon

IAUC41N06S5N102ATMA1 ✓ 量产中

规格对比

参数 IAUC41N06S5L IAUC41N06S5N102ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.58
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUC41N06S5L —
Technology OptiMOS-5 trench MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>) [DATA_NEEDED: I_D max value] —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 10 mΩ typical —
R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate Threshold Voltage (V<sub>GS(th)</sub>) Logic-level (around 1.7 V typical) —
Maximum Operating Junction Temperature 175 °C —
封装 TDSON-8 (PG-TDSON-8) PG-TDSON-8-33 (SSO8) Surface Mount
安装类型 Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101 (per Infineon automotive MOSFET family)
Channel Type N-channel, Enhancement mode —
RoHS 状态 Compliant (Green Product) Compliant
Lead-Free Yes —
Gate-Source Voltage (V<sub>GS</sub>) max [DATA_NEEDED: V_GS max absolute rating] —
Part Family — OptiMOS 5 Power-Transistor
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 47 A (Tj)
Power Dissipation (PD, Tc=25C) — 42 W
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
工作温度范围 — -55C to +175C (junction)
Channel Polarity — N-Channel (single)

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