IAUC41N06S5L100ATMA1 vs ISC015N04NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC41N06S5L100ATMA1 von Infineon und ISC015N04NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUC41N06S5L100ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,43 | $0,98 |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Tj) | 41 A | — |
| Power Dissipation (PD, TC) | 42 W | — |
| On-State Resistance (RDS(on)) max | 10 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 3.4 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Betriebstemperaturbereich | -55C to +175C | -55 C to +175 C (junction, per OptiMOS 5) |
| Gehäuse | PG-TDSON-8-33 (TDSON-8, 5x6 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per Infineon SuperSO8 family) |
| Automotive Qualified | Yes (AEC-Q101 automotive grade) | — |
| RoHS-Status | Compliant | Compliant |
| Interconnect | Copper clip (low-inductance) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Gehäuse / Bauform | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Pin-Anzahl | — | 8 |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |