IAUC41N06S5L100ATMA1 vs ISC015N04NM5ATMA1 对比

详细并排对比 IAUC41N06S5L100ATMA1 出自 Infineon 和 ISC015N04NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ 量产中
Infineon
ISC015N04NM5ATMA1 ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N04NM5ATMA1 ✓ 量产中

规格对比

参数 IAUC41N06S5L100ATMA1 ISC015N04NM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.43 $0.98
Technology OptiMOS 5 (Trench MOSFET) OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tj) 41 A —
Power Dissipation (PD, TC) 42 W —
On-State Resistance (RDS(on)) max 10 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 3.4 V (typ)
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
工作温度范围 -55C to +175C -55 C to +175 C (junction, per OptiMOS 5)
封装 PG-TDSON-8-33 (TDSON-8, 5x6 mm) —
安装类型 Surface Mount Surface Mount
Channel Type N-Channel —
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per Infineon SuperSO8 family)
Automotive Qualified Yes (AEC-Q101 automotive grade) —
RoHS 状态 Compliant Compliant
Interconnect Copper clip (low-inductance) —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
封装 / 外壳 — PG-TDSON-8 FL (SuperSO8 5x6 mm)
引脚数量 — 8
Drive Level — Normal Level (VGS(th) ~3.4 V)

数据手册与资源

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