IAUC41N06S5N102ATMA1 vs IAUCN08S7L033ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC41N06S5N102ATMA1 von Infineon und IAUCN08S7L033ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC41N06S5N102ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | — |
| Power Dissipation (PD, Tc=25C) | 42 W | — |
| On-Resistance (RDS(on)) | 10.2 mΩ at VGS=10 V, ID=20 A | — |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | — |
| Total Gate Charge (QG) | 12.5 nC | — |
| Gehäuse | PG-TDSON-8-33 (SSO8) Surface Mount | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55°C to +175°C (TJ) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | — |
| RoHS-Status | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | — |
| Series | — | Automotive OptiMOS 7 |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| MSL-Level | — | 1 (per JEDEC J-STD-020, typical for this package) |