IAUC41N06S5N102ATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUC41N06S5N102ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC41N06S5N102ATMA1
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΞ© OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC41N06S5N102ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | β |
| Power Dissipation (PD, Tc=25C) | 42 W | β |
| On-Resistance (RDS(on)) | 10.2 mΞ© at VGS=10 V, ID=20 A | β |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | β |
| Total Gate Charge (QG) | 12.5 nC | β |
| Package | PG-TDSON-8-33 (SSO8) Surface Mount | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Operating Temperature Range | -55C to +175C (junction) | -55Β°C to +175Β°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | β |
| RoHS Status | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | β |
| Series | β | Automotive OptiMOS 7 |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |
| Technology | β | OptiMOS 7 trench MOSFET |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for this package) |