IAUC50N08S5N102ATMA1 vs IAUCN08S7L033ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC50N08S5N102ATMA1 von Infineon und IAUCN08S7L033ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUC50N08S5N102ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | Automotive OptiMOS 7 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 50 A | — |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 25 A, 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Total Gate Charge (Qg) | 21 nC @ 10 V | — |
| Input Capacitance (Ciss) | 1394 pF @ 40 V | — |
| Power Dissipation (PD) at TC=25°C | 60 W | — |
| Betriebstemperaturbereich | -55°C to +175°C | -55°C to +175°C (TJ) |
| Gehäuse / Bauform | PG-TDSON-8-33 | — |
| Montageart | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 | Automotive Grade (per Infineon datasheet header) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for this package) |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gehäuse | — | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Technology | — | OptiMOS 7 trench MOSFET |