IAUC60N04S6L030HATMA1 vs IAUC120N06S5N017ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N04S6L030HATMA1 von Infineon und IAUC120N06S5N017ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktivInfineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC60N04S6L030HATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,94 | $1,32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | 95.9 nC |
| Output Capacitance (Coss) | 2.128 nF | 1.507 nF |
| Reverse Transfer Capacitance (Crss) | 596 pF | 84 pF |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8-43 (TDSON-8 EP) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | MSL1 (260°C peak reflow) |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A |
| Pulsed Drain Current (IDM) | — | 757 A |
| RDS(on) at VGS=10V | — | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| Input Capacitance (Ciss) | — | 6.952 nF |
| Power Dissipation (PD, Tc=25°C) | — | 167 W |
| Betriebstemperaturbereich | — | -55°C to +175°C |
| AEC-Q101 Qualification | — | Yes (Automotive Grade) |
| RoHS Compliance | — | Green Product (RoHS compliant) |