IAUC60N04S6L030HATMA1 vs IAUC120N06S5N017ATMA1 비교
다음의 상세 나란히 비교: IAUC60N04S6L030HATMA1 제조: Infineon 및 IAUC120N06S5N017ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUC60N04S6L030HATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.94 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | 95.9 nC |
| Output Capacitance (Coss) | 2.128 nF | 1.507 nF |
| Reverse Transfer Capacitance (Crss) | 596 pF | 84 pF |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| 동작 접합 온도 | -55 C to +175 C | — |
| 패키지 | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8-43 (TDSON-8 EP) |
| 실장 유형 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | — |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | MSL1 (260°C peak reflow) |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A |
| Pulsed Drain Current (IDM) | — | 757 A |
| RDS(on) at VGS=10V | — | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| Input Capacitance (Ciss) | — | 6.952 nF |
| Power Dissipation (PD, Tc=25°C) | — | 167 W |
| 동작 온도 범위 | — | -55°C to +175°C |
| AEC-Q101 Qualification | — | Yes (Automotive Grade) |
| RoHS Compliance | — | Green Product (RoHS compliant) |