IAUC60N04S6L030HATMA1 vs IAUC120N06S5N017ATMA1 对比
详细并排对比 IAUC60N04S6L030HATMA1 出自 Infineon 和 IAUC120N06S5N017ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ 量产中规格对比
| 参数 | IAUC60N04S6L030HATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.94 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | 95.9 nC |
| Output Capacitance (Coss) | 2.128 nF | 1.507 nF |
| Reverse Transfer Capacitance (Crss) | 596 pF | 84 pF |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8-43 (TDSON-8 EP) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | MSL1 (260°C peak reflow) |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A |
| Pulsed Drain Current (IDM) | — | 757 A |
| RDS(on) at VGS=10V | — | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| Input Capacitance (Ciss) | — | 6.952 nF |
| Power Dissipation (PD, Tc=25°C) | — | 167 W |
| 工作温度范围 | — | -55°C to +175°C |
| AEC-Q101 Qualification | — | Yes (Automotive Grade) |
| RoHS Compliance | — | Green Product (RoHS compliant) |