IAUCN04S6N009TATMA1 vs IAUCN04S7N009ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S6N009TATMA1 von Infineon und IAUCN04S7N009ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S6N009TATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,71 | $1,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40 V | — |
| Part Number | IAUCN04S6N009T | — |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, at Tj) | 330 A | — |
| Power Dissipation (PD, at Tc) | 178 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Gehäuse | PG-LHDSO-10-2 (SSO10T) | PG-TDSON-8-34 (Surface Mount) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | MOSFET (Metal Oxide) |
| Automotive Qualification | AEC-Q101 | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| Betriebstemperatur | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| MSL-Level | — | 1 |
| RoHS-Status | — | Compliant |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |