IAUCN04S6N009TATMA1 vs IAUCN04S7N009ATMA1 对比
详细并排对比 IAUCN04S6N009TATMA1 出自 Infineon 和 IAUCN04S7N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S6N009TATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.71 | $1.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40 V | — |
| Part Number | IAUCN04S6N009T | — |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, at Tj) | 330 A | — |
| Power Dissipation (PD, at Tc) | 178 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| 封装 | PG-LHDSO-10-2 (SSO10T) | PG-TDSON-8-34 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | MOSFET (Metal Oxide) |
| Automotive Qualification | AEC-Q101 | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| 工作温度 | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| MSL 等级 | — | 1 |
| RoHS 状态 | — | Compliant |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |