IAUCN04S7L005ATMA1 vs IAUCN04S7N037GATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L005ATMA1 von Infineon und IAUCN04S7N037GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUCN04S7L005ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,85 | $0,89 |
| Technology | OptiMOS 7 (trench N-channel MOSFET) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 430 A (Tj) | — |
| Continuous Drain Current (I_D, T_C=100°C) | [DATA_NEEDED: I_D at T_C=100°C] | — |
| On-Resistance R_DS(on) max | 0.52 mΩ | — |
| Power Dissipation (P_D) | 179 W (T_C) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: total Q_g in nC] | — |
| Betriebstemperaturbereich | -55°C to +175°C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Gehäuse | PG-TDSON-8-43 (TDSON-8) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Montageart | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Pin-Anzahl | 8 | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |