IAUCN04S7L005ATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L005ATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΞ© OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L005ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.85 | $0.89 |
| Technology | OptiMOS 7 (trench N-channel MOSFET) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, T_C=25Β°C) | 430 A (Tj) | β |
| Continuous Drain Current (I_D, T_C=100Β°C) | [DATA_NEEDED: I_D at T_C=100Β°C] | β |
| On-Resistance R_DS(on) max | 0.52 mΞ© | β |
| Power Dissipation (P_D) | 179 W (T_C) | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: total Q_g in nC] | β |
| Operating Temperature Range | -55Β°C to +175Β°C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Package | PG-TDSON-8-43 (TDSON-8) | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Pin Count | 8 | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 7 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |