IAUCN04S7L006ATMA1 vs IAUZN04S7L030ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L006ATMA1 von Infineon und IAUZN04S7L030ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN04S7L006ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,38 | $0,36 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-43 | PG-TSDSON-8-44 (S3O8) 3x3 mm² |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS-7 trench | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| RoHS-Status | Compliant | — |
| Pin-Anzahl | 8 | — |
| Packaging | Tape and Reel (ATMA1) | — |
| Polarity | Single N-Channel | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 60 A |
| Pulsed Drain Current (IDM, Tj) | — | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | — | 3.05 mΩ |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Operating Junction Temperature (Tj) | — | -55C to +175C |
| Technology Family | — | OptiMOS-7 |
| Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 (Automotive OptiMOS) |
| RoHS Compliance | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |