IAUCN04S7N012ATMA1 vs BSC094N06LS5ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N012ATMA1 von Infineon und BSC094N06LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN04S7N012ATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $0,38 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS-7 (trench) | OptiMOS™ 5 (logic-level) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | 47 A |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ | — |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typ] |
| Betriebstemperaturbereich | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] | — |
| Gehäuse | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | — |
| Verlustleistung (Ptot) | [DATA_NEEDED: Ptot at TC=25°C] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: RθJA on JEDEC PCB] | — |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| MSL-Level | 1 | [DATA_NEEDED: MSL level] |
| Polarity | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC094N06LS5ATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +150 °C |