IAUCN04S7N012ATMA1 vs BSC094N06LS5ATMA1 对比

详细并排对比 IAUCN04S7N012ATMA1 出自 Infineon 和 BSC094N06LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7N012ATMA1 BSC094N06LS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $0.38
晶体管类型 N-Channel MOSFET —
Technology OptiMOS-7 (trench) OptiMOS™ 5 (logic-level)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 120 A 47 A
On-State Resistance RDS(on) max at VGS=10V 1.2 mΩ —
On-State Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg typ]
工作温度范围 -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] —
封装 PG-TDSON-8-34 (8-PowerTDFN) PG-TDSON-8-6 (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
Transistor Grade Automotive (AEC-Q101) —
功耗(Ptot) [DATA_NEEDED: Ptot at TC=25°C] —
Thermal Resistance RθJA [DATA_NEEDED: RθJA on JEDEC PCB] —
RoHS 状态 Compliant Compliant
无卤 Yes —
MSL 等级 1 [DATA_NEEDED: MSL level]
Polarity N-Channel —
Manufacturer — Infineon Technologies
Part Number — BSC094N06LS5ATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation (PD) at TC=25°C — 36 W
工作结温 — -55 °C to +150 °C

数据手册与资源

浏览全部产品 创建 BOM 获取报价