IAUCN04S7N012ATMA1 vs BSC094N06LS5ATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N012ATMA1 por Infineon y BSC094N06LS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N012ATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $0,38 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS-7 (trench) | OptiMOS™ 5 (logic-level) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | 47 A |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ | — |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typ] |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] | — |
| Encapsulado | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | — |
| Disipación de potencia (Ptot) | [DATA_NEEDED: Ptot at TC=25°C] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: RθJA on JEDEC PCB] | — |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| Nivel MSL | 1 | [DATA_NEEDED: MSL level] |
| Polarity | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC094N06LS5ATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +150 °C |