IAUCN04S7N019DATMA1 vs IAUCN04S7N037GATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N019DATMA1 von Infineon und IAUCN04S7N037GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
IAUCN04S7N019DATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUCN04S7N019DATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 7 40V | Trench MOSFET, N-Channel |
| Configuration | Dual N-Channel (array) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 160 A (Tj) | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Gehäuse | PG-TDSON-8-60 (SuperSO8) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Montageart | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Input Capacitance (Ciss, typ.) | 1.465 nF | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Automotive Qualification | AEC-Q101 (family) | AEC-Q101 |
| ESD Protection | Yes (gate integrated) | — |
| MSL-Level | 1 (per JEDEC J-STD-020, family default) | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | Compliant |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Betriebstemperaturbereich | — | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |