IAUCN04S7N019DATMA1 vs IAUCN04S7N037GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N019DATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N019DATMA1 IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon

IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon

IAUCN04S7N019DATMA1 βœ“ Active
Infineon
IAUCN04S7N037GATMA1

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N019DATMA1 IAUCN04S7N037GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 7 40V Trench MOSFET, N-Channel
Configuration Dual N-Channel (array) β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 160 A (Tj) β€”
Power Dissipation (PD, Tc) 96 W β€”
Package PG-TDSON-8-60 (SuperSO8) SSO4G 5x6 mmΒ² (PG-THSOG-4-1)
Mounting Type Surface Mount Surface Mount (IMS substrate attach compatible)
Operating Junction Temperature -55 C to +175 C β€”
Input Capacitance (Ciss, typ.) 1.465 nF β€”
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] β€”
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] β€”
Automotive Qualification AEC-Q101 (family) AEC-Q101
ESD Protection Yes (gate integrated) β€”
MSL Level 1 (per JEDEC J-STD-020, family default) [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Series β€” OptiMOS 7
Continuous Drain Current (ID) at Tj β€” 91 A
On-State Resistance RDS(on) typical β€” 3.65 mΞ© at VGS = 10 V
Power Dissipation (PD) at Tc β€” 57 W
Channel Type β€” N-Channel
Operating Mode β€” Enhancement
Operating Temperature Range β€” [DATA_NEEDED: junction/ambient temperature limits]
Gate Charge (Qg) typical β€” [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]

Datasheets & Resources

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