IAUCN04S7N019DATMA1 vs IAUCN04S7N037GATMA1 Сравнение
Подробное сравнение бок о бок IAUCN04S7N019DATMA1 от Infineon и IAUCN04S7N037GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
IAUCN04S7N019DATMA1 ✓ АктивенInfineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN04S7N019DATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,05 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 7 40V | Trench MOSFET, N-Channel |
| Configuration | Dual N-Channel (array) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 160 A (Tj) | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Корпус | PG-TDSON-8-60 (SuperSO8) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Тип монтажа | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Рабочая температура перехода | -55 C to +175 C | — |
| Input Capacitance (Ciss, typ.) | 1.465 nF | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Automotive Qualification | AEC-Q101 (family) | AEC-Q101 |
| ESD Protection | Yes (gate integrated) | — |
| Уровень MSL | 1 (per JEDEC J-STD-020, family default) | [DATA_NEEDED: MSL level] |
| Статус RoHS | Compliant | Compliant |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Диапазон рабочих температур | — | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |