IAUCN08S7L013ATMA1 vs IAUCN10S5L280DATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7L013ATMA1 von Infineon und IAUCN10S5L280DATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN08S7L013ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,96 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΩ | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | [DATA_NEEDED: continuous drain current at TC=25C] | — |
| Continuous Drain Current (TJ) | 293 A | — |
| Power Dissipation (TC) | 219 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage range] | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55C to +175C (junction) |
| Gehäuse | PG-TDSON-8-53 (TDSON-8 FL) | PG-TDSON-8-61 (SSO8) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| Qualification | AEC-Q101 (automotive) | — |
| RoHS-Status | Compliant | Compliant |
| Packaging | Tape & Reel (suffix ATMA1) | — |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Technology | — | OptiMOS 5 Trench MOSFET |
| Pin-Anzahl | — | 8 |
| Packing | — | Tape & Reel (T&R) |