IAUCN08S7L033ATMA1 vs IAUC120N06S5N017ATMA1 Vergleich

Detaillierter Direktvergleich von IAUCN08S7L033ATMA1 von Infineon und IAUC120N06S5N017ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUCN08S7L033ATMA1 IAUC120N06S5N017ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,86 $1,32
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 OptiMOS 5
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V 60 V
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
Betriebstemperaturbereich -55°C to +175°C (TJ) -55°C to +175°C
Gehäuse PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-43 (TDSON-8 EP)
Montageart Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) —
Technology OptiMOS 7 trench MOSFET —
RoHS-Status Compliant —
MSL-Level 1 (per JEDEC J-STD-020, typical for this package) MSL1 (260°C peak reflow)
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc=25°C) — 120 A
Pulsed Drain Current (IDM) — 757 A
RDS(on) at VGS=10V — 1.7 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.4 V (typ)
Total Gate Charge (Qg) at VGS=10V — 95.9 nC
Input Capacitance (Ciss) — 6.952 nF
Reverse Transfer Capacitance (Crss) — 84 pF
Output Capacitance (Coss) — 1.507 nF
Power Dissipation (PD, Tc=25°C) — 167 W
AEC-Q101 Qualification — Yes (Automotive Grade)
RoHS Compliance — Green Product (RoHS compliant)

Datenblätter & Ressourcen

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