IAUCN08S7L033ATMA1 vs IAUC120N06S5N017ATMA1 Comparación
Comparación detallada lado a lado de IAUCN08S7L033ATMA1 por Infineon y IAUC120N06S5N017ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN08S7L033ATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $1,32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | OptiMOS 5 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ) | -55°C to +175°C |
| Encapsulado | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-43 (TDSON-8 EP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | — |
| Technology | OptiMOS 7 trench MOSFET | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 (per JEDEC J-STD-020, typical for this package) | MSL1 (260°C peak reflow) |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A |
| Pulsed Drain Current (IDM) | — | 757 A |
| RDS(on) at VGS=10V | — | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 95.9 nC |
| Input Capacitance (Ciss) | — | 6.952 nF |
| Reverse Transfer Capacitance (Crss) | — | 84 pF |
| Output Capacitance (Coss) | — | 1.507 nF |
| Power Dissipation (PD, Tc=25°C) | — | 167 W |
| AEC-Q101 Qualification | — | Yes (Automotive Grade) |
| RoHS Compliance | — | Green Product (RoHS compliant) |