IAUCN08S7L033ATMA1 vs IAUC120N06S5N017ATMA1 비교

다음의 상세 나란히 비교: IAUCN08S7L033ATMA1 제조: Infineon 및 IAUC120N06S5N017ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 활성

사양 비교

파라미터 IAUCN08S7L033ATMA1 IAUC120N06S5N017ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.86 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 OptiMOS 5
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V 60 V
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
동작 온도 범위 -55°C to +175°C (TJ) -55°C to +175°C
패키지 PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-43 (TDSON-8 EP)
실장 유형 Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) —
Technology OptiMOS 7 trench MOSFET —
RoHS 상태 Compliant —
MSL 레벨 1 (per JEDEC J-STD-020, typical for this package) MSL1 (260°C peak reflow)
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc=25°C) — 120 A
Pulsed Drain Current (IDM) — 757 A
RDS(on) at VGS=10V — 1.7 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.4 V (typ)
Total Gate Charge (Qg) at VGS=10V — 95.9 nC
Input Capacitance (Ciss) — 6.952 nF
Reverse Transfer Capacitance (Crss) — 84 pF
Output Capacitance (Coss) — 1.507 nF
Power Dissipation (PD, Tc=25°C) — 167 W
AEC-Q101 Qualification — Yes (Automotive Grade)
RoHS Compliance — Green Product (RoHS compliant)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청