IAUCN08S7N024ATMA1 vs IAUCN04S7L050HATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7N024ATMA1 von Infineon und IAUCN04S7L050HATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN08S7N024ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $0,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | OptiMOS™ 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Technology | OptiMOS 7 trench | Trench MOSFET, OptiMOS™ 7 40V |
| Gehäuse | PG-TDSON-8-34 (8-pin, exposed pad) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (typical automotive) | — |
| Verlustleistung (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| RoHS-Status | — | Compliant |