IAUCN08S7N024ATMA1 vs IAUCN04S7L050HATMA1 对比

详细并排对比 IAUCN08S7N024ATMA1 出自 Infineon 和 IAUCN04S7L050HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 ✓ 量产中
Infineon
IAUCN04S7L050HATMA1 IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon

IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon

IAUCN04S7L050HATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7N024ATMA1 IAUCN04S7L050HATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $0.83
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 (80 V) OptiMOS™ 7
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: gate threshold voltage]
Technology OptiMOS 7 trench Trench MOSFET, OptiMOS™ 7 40V
封装 PG-TDSON-8-34 (8-pin, exposed pad) PG-TDSON-8-57 (SuperSO8 half-bridge)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +175C (typical automotive) —
功耗(Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 AEC-Q101 (family-level, automotive grade)
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Configuration — Dual N-Channel (Dual Drain, Half-Bridge)
Continuous Drain Current (ID), Tc=25°C — 65 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.04 mΩ
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) @ Tc=25°C — 40 W
工作结温 — -55 °C to +175 °C
RoHS 状态 — Compliant

数据手册与资源

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