IAUCN08S7N024ATMA1 vs IAUCN04S7L050HATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N024ATMA1 by Infineon and IAUCN04S7L050HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN08S7N024ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | OptiMOS™ 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Technology | OptiMOS 7 trench | Trench MOSFET, OptiMOS™ 7 40V |
| Package | PG-TDSON-8-34 (8-pin, exposed pad) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (typical automotive) | — |
| Power Dissipation (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| RoHS Compliance | Compliant | — |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| RoHS Status | — | Compliant |