IAUCN08S7N024ATMA1 vs IPTG025N15NM6ATMA1 Vergleich

Detaillierter Direktvergleich von IAUCN08S7N024ATMA1 von Infineon und IPTG025N15NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUCN08S7N024ATMA1 IPTG025N15NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,89 $1,52
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (ID) at TC=25C 165 A 264 A (pulsed)
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench OptiMOS 6 150 V (N-channel trench)
Gehäuse PG-TDSON-8-34 (8-pin, exposed pad) PG-HSOG-8-1 (TOLG)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +175C (typical automotive) -55 C to +175 C (typical for OptiMOS 6)
Verlustleistung (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 —
RoHS Compliance Compliant —
MSL-Level [DATA_NEEDED: MSL rating] —
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 26 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 395 W
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
RoHS-Status — Compliant
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

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