IAUCN08S7N024ATMA1 vs IPTG025N15NM6ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N024ATMA1 by Infineon and IPTG025N15NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N024ATMA1
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN08S7N024ATMA1 β ActiveInfineon
IPTG025N15NM6ATMA1
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N024ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $1.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | 264 A (pulsed) |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Technology | OptiMOS 7 trench | OptiMOS 6 150 V (N-channel trench) |
| Package | PG-TDSON-8-34 (8-pin, exposed pad) | PG-HSOG-8-1 (TOLG) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (typical automotive) | -55 C to +175 C (typical for OptiMOS 6) |
| Power Dissipation (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | β |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 26 A |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Power Dissipation (PD) at TC=25C | β | 395 W |
| On-State Resistance RDS(on) typ | β | 2.5 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg value] |
| RoHS Status | β | Compliant |
| MSL (Moisture Sensitivity Level) | β | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | β | Excellent - 30% smaller footprint than D2PAK |