IAUCN08S7N024ATMA1 vs IPTG025N15NM6ATMA1 Comparación
Comparación detallada lado a lado de IAUCN08S7N024ATMA1 por Infineon y IPTG025N15NM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN08S7N024ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $1,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | 264 A (pulsed) |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 7 trench | OptiMOS 6 150 V (N-channel trench) |
| Encapsulado | PG-TDSON-8-34 (8-pin, exposed pad) | PG-HSOG-8-1 (TOLG) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C (typical automotive) | -55 C to +175 C (typical for OptiMOS 6) |
| Disipación de potencia (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Compliance | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 26 A |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 395 W |
| On-State Resistance RDS(on) typ | — | 2.5 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg value] |
| Estado RoHS | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | — | Excellent - 30% smaller footprint than D2PAK |