IAUCN08S7N024ATMA1 vs IPTG025N15NM6ATMA1 비교

다음의 상세 나란히 비교: IAUCN08S7N024ATMA1 제조: Infineon 및 IPTG025N15NM6ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUCN08S7N024ATMA1 IPTG025N15NM6ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.89 $1.52
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (ID) at TC=25C 165 A 264 A (pulsed)
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench OptiMOS 6 150 V (N-channel trench)
패키지 PG-TDSON-8-34 (8-pin, exposed pad) PG-HSOG-8-1 (TOLG)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +175C (typical automotive) -55 C to +175 C (typical for OptiMOS 6)
전력 손실 (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 —
RoHS Compliance Compliant —
MSL 레벨 [DATA_NEEDED: MSL rating] —
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 26 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 395 W
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
RoHS 상태 — Compliant
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청