IAUCN10S5L110TATMA1 vs IAUCN10S7L180ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN10S5L110TATMA1 von Infineon und IAUCN10S7L180ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN10S5L110TATMA1 | IAUCN10S7L180ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,08 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS™ 7 |
| Technology | N-Channel MOSFET, Trench, Logic Level | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Gehäuse | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-TDSON-8-34 (Surface Mount) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260°C peak reflow) | — |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | — |
| RoHS-Status | Compliant | EU RoHS Compliant with Exemption |
| Transistortyp | — | N-Channel MOSFET |
| Number of Channels | — | 1 |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tj) | — | 39 A |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Drain-Source On-Resistance (RDS(on)) | — | 16.1 mΩ @ VGS=10 V |
| Typical RDS(on) | — | 18 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.6 V |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V (±16 V per JLCPCB listing) |
| Total Gate Charge (Qg) | — | 11 nC |
| Input Capacitance (Ciss) | — | 272 pF |
| Output Capacitance (Coss) | — | 668 pF |
| Reverse Transfer Capacitance (Crss) | — | 7 pF |
| Automotive Qualified | — | Yes |
| Configuration | — | Single Quad Drain Triple Source |
| Channel Mode | — | Enhancement |
| Part Status | — | Active |