IAUCN10S5L110TATMA1 vs IAUCN10S7L180ATMA1 비교

다음의 상세 나란히 비교: IAUCN10S5L110TATMA1 제조: Infineon 및 IAUCN10S7L180ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN10S5L110TATMA1 IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon

IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon

IAUCN10S5L110TATMA1 ✓ 활성

사양 비교

파라미터 IAUCN10S5L110TATMA1 IAUCN10S7L180ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.08 $0.58
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS™ 7
Technology N-Channel MOSFET, Trench, Logic Level —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
동작 접합 온도 -55 °C to +175 °C -55 °C to +175 °C
Storage Temperature [DATA_NEEDED: storage temperature] —
패키지 PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TDSON-8-34 (Surface Mount)
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL1 (260°C peak reflow) —
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
RoHS 상태 Compliant EU RoHS Compliant with Exemption
트랜지스터 유형 — N-Channel MOSFET
Number of Channels — 1
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tj) — 39 A
Power Dissipation (PD, Tc=25°C) — 58 W
Drain-Source On-Resistance (RDS(on)) — 16.1 mΩ @ VGS=10 V
Typical RDS(on) — 18 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.6 V
Maximum Gate-Source Voltage (VGS) — ±20 V (±16 V per JLCPCB listing)
Total Gate Charge (Qg) — 11 nC
Input Capacitance (Ciss) — 272 pF
Output Capacitance (Coss) — 668 pF
Reverse Transfer Capacitance (Crss) — 7 pF
Automotive Qualified — Yes
Configuration — Single Quad Drain Triple Source
Channel Mode — Enhancement
Part Status — Active

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