IAUCN10S5L110TATMA1 vs IAUCN10S7L180ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUCN10S5L110TATMA1 par Infineon et IAUCN10S7L180ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUCN10S5L110TATMA1 | IAUCN10S7L180ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,08 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS™ 7 |
| Technology | N-Channel MOSFET, Trench, Logic Level | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Boîtier | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-TDSON-8-34 (Surface Mount) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (260°C peak reflow) | — |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | — |
| Statut RoHS | Compliant | EU RoHS Compliant with Exemption |
| Type de transistor | — | N-Channel MOSFET |
| Number of Channels | — | 1 |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tj) | — | 39 A |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Drain-Source On-Resistance (RDS(on)) | — | 16.1 mΩ @ VGS=10 V |
| Typical RDS(on) | — | 18 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.6 V |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V (±16 V per JLCPCB listing) |
| Total Gate Charge (Qg) | — | 11 nC |
| Input Capacitance (Ciss) | — | 272 pF |
| Output Capacitance (Coss) | — | 668 pF |
| Reverse Transfer Capacitance (Crss) | — | 7 pF |
| Automotive Qualified | — | Yes |
| Configuration | — | Single Quad Drain Triple Source |
| Channel Mode | — | Enhancement |
| Part Status | — | Active |