IAUCN10S5L110TATMA1 vs IAUCN10S7L180ATMA1 Сравнение
Подробное сравнение бок о бок IAUCN10S5L110TATMA1 от Infineon и IAUCN10S7L180ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ АктивенInfineon
IAUCN10S7L180ATMA1 - 100V 39A 18mΩ Automotive MOSFET | Infineon
IAUCN10S7L180ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN10S5L110TATMA1 | IAUCN10S7L180ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,08 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS™ 7 |
| Technology | N-Channel MOSFET, Trench, Logic Level | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| Рабочая температура перехода | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Корпус | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-TDSON-8-34 (Surface Mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (260°C peak reflow) | — |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | — |
| Статус RoHS | Compliant | EU RoHS Compliant with Exemption |
| Тип транзистора | — | N-Channel MOSFET |
| Number of Channels | — | 1 |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tj) | — | 39 A |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Drain-Source On-Resistance (RDS(on)) | — | 16.1 mΩ @ VGS=10 V |
| Typical RDS(on) | — | 18 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.6 V |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V (±16 V per JLCPCB listing) |
| Total Gate Charge (Qg) | — | 11 nC |
| Input Capacitance (Ciss) | — | 272 pF |
| Output Capacitance (Coss) | — | 668 pF |
| Reverse Transfer Capacitance (Crss) | — | 7 pF |
| Automotive Qualified | — | Yes |
| Configuration | — | Single Quad Drain Triple Source |
| Channel Mode | — | Enhancement |
| Part Status | — | Active |