IAUT300N08S5N014ATMA1 vs IAUT300N08S5N011ATMA1 Vergleich
Detaillierter Direktvergleich von IAUT300N08S5N014ATMA1 von Infineon und IAUT300N08S5N011ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUT300N08S5N014ATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,05 | $5,40 |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 300 A (DC) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) Max | ±20 V (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation PD @ TC=25°C | 300 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 °C / 85 % RH) | — |
| Peak Reflow Temperature | 260 °C | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per Infineon datasheet) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Technology Family | OptiMOS 5 (Infineon) | — |
| Technology | — | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 300 A |
| Pulsed Drain Current (I_DM) | — | 410 A (Tj) |
| R_DS(on) max | — | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.8 V |
| Total Gate Charge (Q_g) | — | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | — | 16.25 nF |
| Output Capacitance (C_oss) | — | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | — | 130 pF |
| Power Dissipation (P_D) | — | 375 W at T_C=25C |
| Betriebstemperaturbereich | — | -55C to +175C |
| MSL-Level | — | 1 |
| Qualification | — | Automotive (AEC-Q101) |