IAUT300N08S5N014ATMA1 vs IAUT300N08S5N011ATMA1 Comparison
Detailed side-by-side comparison of IAUT300N08S5N014ATMA1 by Infineon and IAUT300N08S5N011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N014ATMA1
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 β ActiveInfineon
IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
IAUT300N08S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUT300N08S5N014ATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.05 | $5.40 |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 300 A (DC) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) Max | Β±20 V (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| Power Dissipation PD @ TC=25Β°C | 300 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at β€30 Β°C / 85 % RH) | β |
| Peak Reflow Temperature | 260 Β°C | β |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100 % (per Infineon datasheet) | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Technology Family | OptiMOS 5 (Infineon) | β |
| Technology | β | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | β | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | β | 300 A |
| Pulsed Drain Current (I_DM) | β | 410 A (Tj) |
| R_DS(on) max | β | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.8 V |
| Total Gate Charge (Q_g) | β | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | β | 16.25 nF |
| Output Capacitance (C_oss) | β | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | β | 130 pF |
| Power Dissipation (P_D) | β | 375 W at T_C=25C |
| Operating Temperature Range | β | -55C to +175C |
| MSL Level | β | 1 |
| Qualification | β | Automotive (AEC-Q101) |