IAUZ18N10S5L420ATMA1 vs IAUS260N10S5N019TATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ18N10S5L420ATMA1 von Infineon und IAUS260N10S5N019TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ AktivInfineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ18N10S5L420ATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $2,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 100V | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | — |
| Total Gate Charge (Qg) typ. | 8.5 nC | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench-gate |
| Configuration | Single with built-in diode | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Product Series | — | OptiMOS 5 |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| Pin-Anzahl | — | 16 |
| Betriebstemperaturbereich | — | -55 C to +175 C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |