IAUZ18N10S5L420ATMA1 vs IAUS260N10S5N019TATMA1 对比
详细并排对比 IAUZ18N10S5L420ATMA1 出自 Infineon 和 IAUS260N10S5N019TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ 量产中规格对比
| 参数 | IAUZ18N10S5L420ATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $2.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 100V | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | — |
| Total Gate Charge (Qg) typ. | 8.5 nC | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench-gate |
| Configuration | Single with built-in diode | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Product Series | — | OptiMOS 5 |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| 引脚数量 | — | 16 |
| 工作温度范围 | — | -55 C to +175 C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |