IAUZ30N10S5L240ATMA1 vs IAUZ40N10S5N130ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ30N10S5L240ATMA1 von Infineon und IAUZ40N10S5N130ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ AktivInfineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ30N10S5L240ATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $0,52 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (super-junction trench) |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| R_DS(on) max at V_GS=10V | 24 mΩ | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | — |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | — |
| Power Dissipation (P_D, Tc) | 45.5 W | — |
| Gehäuse | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +175°C (junction, automotive grade) | -55°C to +175°C (TJ) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| RoHS-Status | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUZ40N10S5N130ATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| RDS(on) max at VGS=10V | — | 13 mΩ |
| RDS(on) typical | — | 10 mΩ |
| Maximum Power Dissipation (Tc) | — | 68 W |
| Lead-Free / RoHS | — | ROHS3 Compliant |