IAUZ30N10S5L240ATMA1 vs IAUZ40N10S5N130ATMA1 Comparison

Detailed side-by-side comparison of IAUZ30N10S5L240ATMA1 by Infineon and IAUZ40N10S5N130ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 ✓ Active

Specification Comparison

Parameter IAUZ30N10S5L240ATMA1 IAUZ40N10S5N130ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology OptiMOS 5 (trench) OptiMOS 5 (super-junction trench)
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
R_DS(on) max at V_GS=10V 24 mΩ —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Charge (Q_g) typ 14 nC at V_GS=10V —
Input Capacitance (C_iss) typ 832 pF at V_DS=50V —
Power Dissipation (P_D, Tc) 45.5 W —
Package PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +175°C (junction, automotive grade) -55°C to +175°C (TJ)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
RoHS Status Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Part Number — IAUZ40N10S5N130ATMA1
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25°C — 40 A
Pulsed Drain Current (IDM) — 160 A
RDS(on) max at VGS=10V — 13 mΩ
RDS(on) typical — 10 mΩ
Maximum Power Dissipation (Tc) — 68 W
Lead-Free / RoHS — ROHS3 Compliant

Datasheets & Resources

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