IAUZ30N10S5L240ATMA1 vs IAUZ40N10S5N130ATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N10S5L240ATMA1 by Infineon and IAUZ40N10S5N130ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 β ActiveInfineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N10S5L240ATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.52 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (super-junction trench) |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D, Tc) | 30 A | β |
| R_DS(on) max at V_GS=10V | 24 mΞ© | β |
| Gate-Source Voltage (V_GS) max | Β±20 V | β |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | β |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | β |
| Power Dissipation (P_D, Tc) | 45.5 W | β |
| Package | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | PG-TSDSON-8-33 (S3O8), 3.3 Γ 3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (junction, automotive grade) | -55Β°C to +175Β°C (TJ) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IAUZ40N10S5N130ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 40 A |
| Pulsed Drain Current (IDM) | β | 160 A |
| RDS(on) max at VGS=10V | β | 13 mΞ© |
| RDS(on) typical | β | 10 mΞ© |
| Maximum Power Dissipation (Tc) | β | 68 W |
| Lead-Free / RoHS | β | ROHS3 Compliant |