IAUZ30N10S5L240ATMA1 vs IAUZ40N10S5N130ATMA1 对比
详细并排对比 IAUZ30N10S5L240ATMA1 出自 Infineon 和 IAUZ40N10S5N130ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ 量产中Infineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ 量产中规格对比
| 参数 | IAUZ30N10S5L240ATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.86 | $0.52 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (super-junction trench) |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| R_DS(on) max at V_GS=10V | 24 mΩ | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | — |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | — |
| Power Dissipation (P_D, Tc) | 45.5 W | — |
| 封装 | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +175°C (junction, automotive grade) | -55°C to +175°C (TJ) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| RoHS 状态 | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUZ40N10S5N130ATMA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| RDS(on) max at VGS=10V | — | 13 mΩ |
| RDS(on) typical | — | 10 mΩ |
| Maximum Power Dissipation (Tc) | — | 68 W |
| Lead-Free / RoHS | — | ROHS3 Compliant |