IAUZN08S7L177ATMA1 vs IAUC120N04S6N010ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZN08S7L177ATMA1 von Infineon und IAUC120N04S6N010ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZN08S7L177ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $0,68 |
| Technology | OptiMOS 7 N-channel power MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 35 A (Tj) | — |
| Power Dissipation (PD) | 45 W (Tc) | — |
| On-Resistance (RDS(on)) | 17.7 mΩ max | — |
| Gehäuse | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TDSON-8-34 (5x6 mm leadless) |
| Montageart | Surface Mount | Surface Mount |
| Polarity | N-Channel | Single N-channel |
| Betriebstemperatur | -55C to +175C (Tj, automotive grade) | — |
| Configuration | Single | — |
| Qualification | AEC-Q101 automotive | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Lead-Free | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Automotive Qualification | — | AEC-Q101 |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |